TY  - JOUR
AU  - Gareev, R. R.
AU  - Weides, M.
AU  - Schreiber, R.
AU  - Poppe, U.
TI  - Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers
JO  - Applied physics letters
VL  - 88
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-51549
SP  - 172105
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states. (c) 2006 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000237136600035
DO  - DOI:10.1063/1.2198812
UR  - https://juser.fz-juelich.de/record/51549
ER  -