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@ARTICLE{Gareev:51549,
author = {Gareev, R. R. and Weides, M. and Schreiber, R. and Poppe,
U.},
title = {{R}esonant {T}unneling {M}agnetoresistive in
{A}ntiferromagnetically coupled {F}e-based {S}tructures with
{M}ultilayered {S}i/{G}e {S}pacers},
journal = {Applied physics letters},
volume = {88},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-51549},
pages = {172105},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {We report on the experimental evidence of the tunneling
magnetoresistance (TMR) effect near $3\%$ and its inversion
in strongly antiferromagnetically coupled Fe(001)/([Si(0.2
nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused
interfaces. We explain the inversion of TMR with biasing
voltage by resonant tunneling across impurity states with
weak spin split Delta E similar to 10 meV and spin-dependent
filtering in the spacer layer. The resonant tunneling is
manifested in spin-dependent resonances close to zero
biasing voltages related to antiferromagnetic coupling
across impurity states. (c) 2006 American Institute of
Physics.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI / IFF-IMF / IFF-IEE},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB37
/ I:(DE-Juel1)VDB38},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000237136600035},
doi = {10.1063/1.2198812},
url = {https://juser.fz-juelich.de/record/51549},
}