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| Hauptseite > Publikationsdatenbank > Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers > print |
| Hauptseite > Publikationsdatenbank > Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers > print |
| 001 | 51549 | ||
| 005 | 20240610120738.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://apl.aip.org |
| 024 | 7 | _ | |a 10.1063/1.2198812 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Gareev, R. R. |b 0 |u FZJ |0 P:(DE-Juel1)VDB440 |
| 245 | _ | _ | |a Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2006 |
| 300 | _ | _ | |a 172105 |
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| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 88 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states. (c) 2006 American Institute of Physics. |
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| 773 | _ | _ | |a 10.1063/1.2198812 |g Vol. 88, p. 172105 |p 172105 |q 88<172105 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 88 |y 2006 |x 0003-6951 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.2198812 |u http://hdl.handle.net/2128/1098 |
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