%0 Journal Article
%A Knoch, J.
%A Mantl, S.
%A Appenzeller, J.
%T Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
%J Solid state electronics
%V 49
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M PreJuSER-52768
%P 73 - 76
%D 2005
%Z Record converted from VDB: 12.11.2012
%X In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. (C) 2004 Elsevier Ltd. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000225719100012
%R 10.1016/j.sse.2004.07.002
%U https://juser.fz-juelich.de/record/52768