Journal Article

PreJuSER-52768

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts

Knoch, J.FZJ* ; Mantl, S.FZJ* ; Appenzeller, J.

2005
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2004.07.002

Abstract: In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. (C) 2004 Elsevier Ltd. All rights reserved.

Keyword(s): J ; carbon nanotubes (auto) ; field-effect transistor (auto) ; Schottky contacts (auto) ; electronic transport (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: Nachtrag

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