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000052768 084__ $$2WoS$$aEngineering, Electrical & Electronic
000052768 084__ $$2WoS$$aPhysics, Applied
000052768 084__ $$2WoS$$aPhysics, Condensed Matter
000052768 1001_ $$0P:(DE-Juel1)VDB56683$$aKnoch, J.$$b0$$uFZJ
000052768 245__ $$aComparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
000052768 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2005
000052768 300__ $$a73 - 76
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000052768 440_0 $$06634$$aSolid-State Electronics$$v49$$x0038-1101
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000052768 520__ $$aIn this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. (C) 2004 Elsevier Ltd. All rights reserved.
000052768 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000052768 65320 $$2Author$$acarbon nanotubes
000052768 65320 $$2Author$$afield-effect transistor
000052768 65320 $$2Author$$aSchottky contacts
000052768 65320 $$2Author$$aelectronic transport
000052768 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b1$$uFZJ
000052768 7001_ $$0P:(DE-HGF)0$$aAppenzeller, J.$$b2
000052768 773__ $$0PERI:(DE-600)2012825-3$$a10.1016/j.sse.2004.07.002$$gVol. 49, p. 73 - 76$$p73 - 76$$q49<73 - 76$$tSolid state electronics$$v49$$x0038-1101$$y2005
000052768 8567_ $$uhttp://dx.doi.org/10.1016/j.sse.2004.07.002
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