TY  - JOUR
AU  - Knoch, J.
AU  - Mantl, S.
AU  - Appenzeller, J.
TI  - Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
JO  - Solid state electronics
VL  - 49
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - PreJuSER-52768
SP  - 73 - 76
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. (C) 2004 Elsevier Ltd. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000225719100012
DO  - DOI:10.1016/j.sse.2004.07.002
UR  - https://juser.fz-juelich.de/record/52768
ER  -