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| 001 | 52768 | ||
| 005 | 20190625110301.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.sse.2004.07.002 |
| 024 | 7 | _ | |2 WOS |a WOS:000225719100012 |
| 024 | 7 | _ | |a altmetric:1245179 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-52768 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Knoch, J. |b 0 |u FZJ |0 P:(DE-Juel1)VDB56683 |
| 245 | _ | _ | |a Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts |
| 260 | _ | _ | |a Oxford [u.a.] |b Pergamon, Elsevier Science |c 2005 |
| 300 | _ | _ | |a 73 - 76 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Solid-State Electronics |x 0038-1101 |0 6634 |v 49 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. (C) 2004 Elsevier Ltd. All rights reserved. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a carbon nanotubes |
| 653 | 2 | 0 | |2 Author |a field-effect transistor |
| 653 | 2 | 0 | |2 Author |a Schottky contacts |
| 653 | 2 | 0 | |2 Author |a electronic transport |
| 700 | 1 | _ | |a Mantl, S. |b 1 |u FZJ |0 P:(DE-Juel1)VDB4959 |
| 700 | 1 | _ | |a Appenzeller, J. |b 2 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1016/j.sse.2004.07.002 |g Vol. 49, p. 73 - 76 |p 73 - 76 |q 49<73 - 76 |0 PERI:(DE-600)2012825-3 |t Solid state electronics |v 49 |y 2005 |x 0038-1101 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.sse.2004.07.002 |
| 909 | C | O | |o oai:juser.fz-juelich.de:52768 |p VDB |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2005 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
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| 980 | _ | _ | |a VDB |
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| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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