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@ARTICLE{Lin:52769,
      author       = {Lin, Y. and Appenzeller, J. and Knoch, J. and Avouris, P.},
      title        = {{H}igh-{P}erformance {C}arbon {N}anotube {F}ield-{E}ffect
                      {T}ransistor {W}ith {T}unable {P}olarities},
      journal      = {IEEE transactions on nanotechnology},
      volume       = {4},
      issn         = {1536-125X},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-52769},
      pages        = {481 - 489},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {State-of-the-art carbon nanotube field-effect transistors
                      (CNFETs) behave as Schottky-barrier-modulated transistors.
                      It is known that vertical scaling of the gate oxide
                      significantly improves the performance of these devices.
                      However, decreasing the oxide thickness also results in
                      pronounced ambipolar transistor characteristics and
                      increased drain leakage currents. Using a novel device
                      concept, we have fabricated high-performance
                      enhancement-mode CNFETs exhibiting n- or p-type unipolar
                      behavior, tunable by electrostatic and/or chemical doping,
                      with excellent OFF-State performance and a steep
                      subthreshold swing (S = 63 mV/dec). The device design allows
                      for aggressive oxide thickness and gate-length scaling while
                      maintaining the desired device characteristics.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1 / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000231809500001},
      doi          = {10.1109/TNANO.2005.851427},
      url          = {https://juser.fz-juelich.de/record/52769},
}