Journal Article

PreJuSER-5316

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges

Waser, R.FZJ* ; Dittmann, R.FZJ* ; Staikov, G.FZJ* ; Szot, K.FZJ*

2009
Wiley-VCH Weinheim

This record in other databases:    

Please use a persistent id in citations: doi:10.1002/adma.200900375

Abstract: This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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