%0 Journal Article
%A Appenzeller, J.
%A Lin, Y.-M.
%A Knoch, J.
%A Chen, Z.
%A Avouris, P.
%T Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design
%J IEEE Transactions on Electron Devices
%V 52
%@ 0018-9383
%M PreJuSER-53199
%P 2568
%D 2005
%Z Record converted from VDB: 12.11.2012
%X Three different carbon nanotube (CN) field-effect transistor (CNFET) designs are compared by simulation and experiment. While a C-CNFET with a doping profile similar to a "conventional" (referred to as C-CNFET in the following) p-or n-MOSFET in principle exhibits superior device characteristics when compared with a Schottky barrier CNFET, we find that aggressively scaled C-CNFET devices suffer from "charge pile-up" in the channel. This effect which is also known to occur in floating body silicon transistors deteriorates the C-CNFET off-state substantially and ultimately limits the achievable on/off-current ratio. In order to overcome this obstacle we explore the possibility of using CNs as gate-controlled tunneling devices (T-CNFETs). The T-CNFET benefits from a steep inverse subthreshold slope and a well controlled off-state while at the same time delivering high performance on-state characteristics. According to our simulation, the T-CNFET is the ideal transistor design for an ultrathin body three-terminal device like the CNFET.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000233682200006
%R 10.1109/TED.2005.859654
%U https://juser.fz-juelich.de/record/53199