Journal Article

PreJuSER-53199

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design

Appenzeller, J. ; Lin, Y.-M. ; Knoch, J.FZJ* ; Chen, Z. ; Avouris, P.

2005

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Please use a persistent id in citations: doi:10.1109/TED.2005.859654

Abstract: Three different carbon nanotube (CN) field-effect transistor (CNFET) designs are compared by simulation and experiment. While a C-CNFET with a doping profile similar to a "conventional" (referred to as C-CNFET in the following) p-or n-MOSFET in principle exhibits superior device characteristics when compared with a Schottky barrier CNFET, we find that aggressively scaled C-CNFET devices suffer from "charge pile-up" in the channel. This effect which is also known to occur in floating body silicon transistors deteriorates the C-CNFET off-state substantially and ultimately limits the achievable on/off-current ratio. In order to overcome this obstacle we explore the possibility of using CNs as gate-controlled tunneling devices (T-CNFETs). The T-CNFET benefits from a steep inverse subthreshold slope and a well controlled off-state while at the same time delivering high performance on-state characteristics. According to our simulation, the T-CNFET is the ideal transistor design for an ultrathin body three-terminal device like the CNFET.

Keyword(s): J ; carbon nanotube (CN) (auto) ; field-effect transistor (FET) (auto) ; tunneling (T) device (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: Nachtrag

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