guest ::
| Home > Publications database > Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design > print |
| Home > Publications database > Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design > print |
| 001 | 53199 | ||
| 005 | 20190625111110.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/TED.2005.859654 |
| 024 | 7 | _ | |2 WOS |a WOS:000233682200006 |
| 024 | 7 | _ | |a altmetric:3406952 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-53199 |
| 041 | _ | _ | |a eng |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Appenzeller, J. |b 0 |
| 245 | _ | _ | |a Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design |
| 260 | _ | _ | |c 2005 |
| 300 | _ | _ | |a 2568 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 440 | _ | 0 | |0 2508 |a IEEE Transactions on Electron Devices |v 52 |x 0018-9383 |y 12 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Three different carbon nanotube (CN) field-effect transistor (CNFET) designs are compared by simulation and experiment. While a C-CNFET with a doping profile similar to a "conventional" (referred to as C-CNFET in the following) p-or n-MOSFET in principle exhibits superior device characteristics when compared with a Schottky barrier CNFET, we find that aggressively scaled C-CNFET devices suffer from "charge pile-up" in the channel. This effect which is also known to occur in floating body silicon transistors deteriorates the C-CNFET off-state substantially and ultimately limits the achievable on/off-current ratio. In order to overcome this obstacle we explore the possibility of using CNs as gate-controlled tunneling devices (T-CNFETs). The T-CNFET benefits from a steep inverse subthreshold slope and a well controlled off-state while at the same time delivering high performance on-state characteristics. According to our simulation, the T-CNFET is the ideal transistor design for an ultrathin body three-terminal device like the CNFET. |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK252 |2 G:(DE-HGF) |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a carbon nanotube (CN) |
| 653 | 2 | 0 | |2 Author |a field-effect transistor (FET) |
| 653 | 2 | 0 | |2 Author |a tunneling (T) device |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Lin, Y.-M. |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB56683 |a Knoch, J. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Chen, Z. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Avouris, P. |b 4 |
| 773 | _ | _ | |0 PERI:(DE-600)2028088-9 |a 10.1109/TED.2005.859654 |g Vol. 52, p. 2568 |p 2568 |q 52<2568 |t IEEE Transactions on Electron Devices |v 52 |x 0018-9383 |y 2005 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/TED.2005.859654 |
| 909 | C | O | |o oai:juser.fz-juelich.de:53199 |p VDB |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK252 |b Information |k I01 |l Informationstechnologie mit nanoelektronischen Systemen |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2005 |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB41 |d 31.12.2006 |g ISG |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB381 |d 14.09.2008 |g CNI |k CNI |l Center of Nanoelectronic Systems for Information Technology |x 1 |z 381 |
| 970 | _ | _ | |a VDB:(DE-Juel1)83657 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|