TY  - JOUR
AU  - Munoz, A. G.
AU  - Staikov, G.
TI  - Electrodeposition of Metals on Anodized Thin Nb Films
JO  - Journal of solid state electrochemistry
VL  - 10
SN  - 1432-8488
CY  - Berlin
PB  - Springer
M1  - PreJuSER-53200
SP  - 329 - 336
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - The influence of the electronic properties of oxidized Nb surfaces on the electrodeposition of metals (Me=Co, Cu, Ag) with different equilibrium potentials U-Me/Mez studied by conventional electrochemical techniques and atomic force microscopy. The results show that relatively thin anodic Nb2O5 films (thickness < 11 nm) present a frequency-dependent n-type semiconductor behavior, which can be described by the theory of amorphous semiconductor. The Schottky barrier, formed at the a-Nb2O5/electrolyte interface, affects the deposition rate of metals with equilibrium potentials more positive than the flat band potential (UMe/Mez+ > U-FB). Then, the dependence of density of states on the oxide thickness and anodization conditions leads to different extents of the band bending, affecting directly the rate of electron transfer.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000236001800009
DO  - DOI:10.1007/s10008-005-0090-y
UR  - https://juser.fz-juelich.de/record/53200
ER  -