Journal Article

PreJuSER-53200

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrodeposition of Metals on Anodized Thin Nb Films

Munoz, A. G.FZJ* ; Staikov, G.FZJ*

2006
Springer Berlin

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Please use a persistent id in citations: doi:10.1007/s10008-005-0090-y

Abstract: The influence of the electronic properties of oxidized Nb surfaces on the electrodeposition of metals (Me=Co, Cu, Ag) with different equilibrium potentials U-Me/Mez studied by conventional electrochemical techniques and atomic force microscopy. The results show that relatively thin anodic Nb2O5 films (thickness < 11 nm) present a frequency-dependent n-type semiconductor behavior, which can be described by the theory of amorphous semiconductor. The Schottky barrier, formed at the a-Nb2O5/electrolyte interface, affects the deposition rate of metals with equilibrium potentials more positive than the flat band potential (UMe/Mez+ > U-FB). Then, the dependence of density of states on the oxide thickness and anodization conditions leads to different extents of the band bending, affecting directly the rate of electron transfer.

Keyword(s): J ; Nb oxide (auto) ; electrodeposition (auto) ; n-semiconductors (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006

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