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@ARTICLE{Munoz:53200,
author = {Munoz, A. G. and Staikov, G.},
title = {{E}lectrodeposition of {M}etals on {A}nodized {T}hin {N}b
{F}ilms},
journal = {Journal of solid state electrochemistry},
volume = {10},
issn = {1432-8488},
address = {Berlin},
publisher = {Springer},
reportid = {PreJuSER-53200},
pages = {329 - 336},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {The influence of the electronic properties of oxidized Nb
surfaces on the electrodeposition of metals (Me=Co, Cu, Ag)
with different equilibrium potentials U-Me/Mez studied by
conventional electrochemical techniques and atomic force
microscopy. The results show that relatively thin anodic
Nb2O5 films (thickness < 11 nm) present a
frequency-dependent n-type semiconductor behavior, which can
be described by the theory of amorphous semiconductor. The
Schottky barrier, formed at the a-Nb2O5/electrolyte
interface, affects the deposition rate of metals with
equilibrium potentials more positive than the flat band
potential (UMe/Mez+ > U-FB). Then, the dependence of density
of states on the oxide thickness and anodization conditions
leads to different extents of the band bending, affecting
directly the rate of electron transfer.},
keywords = {J (WoSType)},
cin = {ISG-3 / CNI},
ddc = {540},
cid = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Electrochemistry},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000236001800009},
doi = {10.1007/s10008-005-0090-y},
url = {https://juser.fz-juelich.de/record/53200},
}