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| Hauptseite > Publikationsdatenbank > Electrodeposition of Metals on Anodized Thin Nb Films > print |
| 001 | 53200 | ||
| 005 | 20180211172334.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1007/s10008-005-0090-y |
| 024 | 7 | _ | |2 WOS |a WOS:000236001800009 |
| 037 | _ | _ | |a PreJuSER-53200 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Electrochemistry |
| 100 | 1 | _ | |a Munoz, A. G. |b 0 |u FZJ |0 P:(DE-Juel1)VDB60931 |
| 245 | _ | _ | |a Electrodeposition of Metals on Anodized Thin Nb Films |
| 260 | _ | _ | |a Berlin |b Springer |c 2006 |
| 300 | _ | _ | |a 329 - 336 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Solid State Electrochemistry |x 1432-8488 |0 12701 |y 5 |v 10 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The influence of the electronic properties of oxidized Nb surfaces on the electrodeposition of metals (Me=Co, Cu, Ag) with different equilibrium potentials U-Me/Mez studied by conventional electrochemical techniques and atomic force microscopy. The results show that relatively thin anodic Nb2O5 films (thickness < 11 nm) present a frequency-dependent n-type semiconductor behavior, which can be described by the theory of amorphous semiconductor. The Schottky barrier, formed at the a-Nb2O5/electrolyte interface, affects the deposition rate of metals with equilibrium potentials more positive than the flat band potential (UMe/Mez+ > U-FB). Then, the dependence of density of states on the oxide thickness and anodization conditions leads to different extents of the band bending, affecting directly the rate of electron transfer. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Nb oxide |
| 653 | 2 | 0 | |2 Author |a electrodeposition |
| 653 | 2 | 0 | |2 Author |a n-semiconductors |
| 700 | 1 | _ | |a Staikov, G. |b 1 |u FZJ |0 P:(DE-Juel1)VDB13645 |
| 773 | _ | _ | |a 10.1007/s10008-005-0090-y |g Vol. 10, p. 329 - 336 |p 329 - 336 |q 10<329 - 336 |0 PERI:(DE-600)1478940-1 |t Journal of solid state electrochemistry |v 10 |y 2006 |x 1432-8488 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1007/s10008-005-0090-y |
| 909 | C | O | |o oai:juser.fz-juelich.de:53200 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)83658 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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