%0 Journal Article
%A Thomas, R.
%A Milanov, A.
%A Bhakta, R.
%A Patil, U.
%A Winter, M.
%A Ehrhart, P.
%A Waser, R.
%A Devi, A.
%T Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor
%J Chemical vapor deposition
%V 12
%@ 0948-1907
%C Weinheim
%I Wiley-VCH
%M PreJuSER-53298
%P 295 - 300
%D 2006
%Z Record converted from VDB: 12.11.2012
%X The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450 degrees C, the ZrO2 films are amorphous, and above 475 degrees C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (similar to 2.5 angstrom) for as-deposited amorphous films compared to crystalline films (similar to 6.0 angstrom); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10(-4) A cm(-2) at a bias of -1 V Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000238117200008
%R 10.1002/cvde.200506481
%U https://juser.fz-juelich.de/record/53298