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| Home > Publications database > Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor |
| Home > Publications database > Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor |
| Journal Article | PreJuSER-53298 |
; ; ; ; ; ; ;
2006
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/cvde.200506481
Abstract: The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450 degrees C, the ZrO2 films are amorphous, and above 475 degrees C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (similar to 2.5 angstrom) for as-deposited amorphous films compared to crystalline films (similar to 6.0 angstrom); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10(-4) A cm(-2) at a bias of -1 V Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.
Keyword(s): J ; high-k dielectrics (auto) ; malonates (auto) ; metal-organic precursors (auto) ; MOCVD (auto) ; ZrO2 (auto)
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