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000053298 0247_ $$2DOI$$a10.1002/cvde.200506481
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000053298 084__ $$2WoS$$aElectrochemistry
000053298 084__ $$2WoS$$aMaterials Science, Coatings & Films
000053298 084__ $$2WoS$$aPhysics, Condensed Matter
000053298 1001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b0$$uFZJ
000053298 245__ $$aLiquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor
000053298 260__ $$aWeinheim$$bWiley-VCH$$c2006
000053298 300__ $$a295 - 300
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000053298 440_0 $$015041$$aChemical Vapor Deposition$$v12$$x0948-1907
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000053298 520__ $$aThe stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450 degrees C, the ZrO2 films are amorphous, and above 475 degrees C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (similar to 2.5 angstrom) for as-deposited amorphous films compared to crystalline films (similar to 6.0 angstrom); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10(-4) A cm(-2) at a bias of -1 V Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.
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000053298 650_7 $$2WoSType$$aJ
000053298 65320 $$2Author$$ahigh-k dielectrics
000053298 65320 $$2Author$$amalonates
000053298 65320 $$2Author$$ametal-organic precursors
000053298 65320 $$2Author$$aMOCVD
000053298 65320 $$2Author$$aZrO2
000053298 7001_ $$0P:(DE-HGF)0$$aMilanov, A.$$b1
000053298 7001_ $$0P:(DE-HGF)0$$aBhakta, R.$$b2
000053298 7001_ $$0P:(DE-HGF)0$$aPatil, U.$$b3
000053298 7001_ $$0P:(DE-HGF)0$$aWinter, M.$$b4
000053298 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b5$$uFZJ
000053298 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$uFZJ
000053298 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b7
000053298 773__ $$0PERI:(DE-600)1477693-5$$a10.1002/cvde.200506481$$gVol. 12, p. 295 - 300$$p295 - 300$$q12<295 - 300$$tChemical vapor deposition$$v12$$x0948-1907$$y2006
000053298 8567_ $$uhttp://dx.doi.org/10.1002/cvde.200506481
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000053298 9141_ $$y2006
000053298 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000053298 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000053298 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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