TY  - JOUR
AU  - Thomas, R.
AU  - Milanov, A.
AU  - Bhakta, R.
AU  - Patil, U.
AU  - Winter, M.
AU  - Ehrhart, P.
AU  - Waser, R.
AU  - Devi, A.
TI  - Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor
JO  - Chemical vapor deposition
VL  - 12
SN  - 0948-1907
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-53298
SP  - 295 - 300
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450 degrees C, the ZrO2 films are amorphous, and above 475 degrees C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (similar to 2.5 angstrom) for as-deposited amorphous films compared to crystalline films (similar to 6.0 angstrom); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10(-4) A cm(-2) at a bias of -1 V Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000238117200008
DO  - DOI:10.1002/cvde.200506481
UR  - https://juser.fz-juelich.de/record/53298
ER  -