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@ARTICLE{Thomas:53298,
      author       = {Thomas, R. and Milanov, A. and Bhakta, R. and Patil, U. and
                      Winter, M. and Ehrhart, P. and Waser, R. and Devi, A.},
      title        = {{L}iquid injection {MOCVD} of {Z}r{O}2 thin films using a
                      novel zirconium
                      {B}is(diethylamido)-bis(di-tert-butylmalonato) as a novel
                      precursor},
      journal      = {Chemical vapor deposition},
      volume       = {12},
      issn         = {0948-1907},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-53298},
      pages        = {295 - 300},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The stabilization of highly reactive amide complexes of
                      zirconium diethylamide with malonates as chelating ligands
                      leads to a stable six-coordinated monomeric complex which
                      shows promise for CVD applications. This novel precursor,
                      zirconium bis(diethylamido)bis(di-tert-butylmalonato)
                      zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized
                      and tested in a production-type MOCVD reactor for ZrO2
                      thin-film deposition. Up to 450 degrees C, the ZrO2 films
                      are amorphous, and above 475 degrees C films they are
                      crystalline. Atomic force microscopy (AFM) shows a lower
                      roughness (similar to 2.5 angstrom) for as-deposited
                      amorphous films compared to crystalline films (similar to
                      6.0 angstrom); however, smooth crystalline films can be
                      obtained by post-deposition annealing of amorphous films.
                      Electrical properties are investigated for Pt/ZrO2/SiOx/Si
                      capacitor structures. Relative dielectric permittivity
                      reaches a bulk value of 24, and leakage currents for
                      typically 4 nm thick films are below 10(-4) A cm(-2) at a
                      bias of -1 V Hence, the precursor shows promising properties
                      for possible application in the deposition of high-k gate
                      oxide (MIS) and high-k dielectric (MIM) structures.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films /
                      Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238117200008},
      doi          = {10.1002/cvde.200506481},
      url          = {https://juser.fz-juelich.de/record/53298},
}