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| Home > Publications database > Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor > print |
| Home > Publications database > Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor > print |
| 001 | 53298 | ||
| 005 | 20180211183815.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1002/cvde.200506481 |
| 024 | 7 | _ | |2 WOS |a WOS:000238117200008 |
| 037 | _ | _ | |a PreJuSER-53298 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Electrochemistry |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Thomas, R. |b 0 |u FZJ |0 P:(DE-Juel1)VDB35139 |
| 245 | _ | _ | |a Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2006 |
| 300 | _ | _ | |a 295 - 300 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Chemical Vapor Deposition |x 0948-1907 |0 15041 |v 12 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt2)(2)(dbml)(2)], has been characterized and tested in a production-type MOCVD reactor for ZrO2 thin-film deposition. Up to 450 degrees C, the ZrO2 films are amorphous, and above 475 degrees C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (similar to 2.5 angstrom) for as-deposited amorphous films compared to crystalline films (similar to 6.0 angstrom); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO2/SiOx/Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10(-4) A cm(-2) at a bias of -1 V Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a high-k dielectrics |
| 653 | 2 | 0 | |2 Author |a malonates |
| 653 | 2 | 0 | |2 Author |a metal-organic precursors |
| 653 | 2 | 0 | |2 Author |a MOCVD |
| 653 | 2 | 0 | |2 Author |a ZrO2 |
| 700 | 1 | _ | |a Milanov, A. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Bhakta, R. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Patil, U. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Winter, M. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Ehrhart, P. |b 5 |u FZJ |0 P:(DE-Juel1)VDB3072 |
| 700 | 1 | _ | |a Waser, R. |b 6 |u FZJ |0 P:(DE-Juel1)131022 |
| 700 | 1 | _ | |a Devi, A. |b 7 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1002/cvde.200506481 |g Vol. 12, p. 295 - 300 |p 295 - 300 |q 12<295 - 300 |0 PERI:(DE-600)1477693-5 |t Chemical vapor deposition |v 12 |y 2006 |x 0948-1907 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1002/cvde.200506481 |
| 909 | C | O | |o oai:juser.fz-juelich.de:53298 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)83760 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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