%0 Journal Article
%A Wensorra, J.
%A Lepsa, M. I.
%A Indlekofer, K. M.
%A Förster, A.
%A Jaschinsky, P.
%A Voigtländer, B.
%A Pirug, G.
%A Lüth, H.
%T Ohmic contacts for GaAs based nanocolumns
%J Physica status solidi / A
%V 203
%@ 0031-8965
%C Weinheim
%I Wiley-VCH
%M PreJuSER-53333
%P 3559 - 3564
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Nonalloyed ohmic contacts with lateral dimensions in the sub-100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a 'top down' approach. They are realized on n-type GaAs using a thin low-temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron-beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I-V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1-2 x 10(-5) Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000242536100021
%R 10.1002/pssa.200622484
%U https://juser.fz-juelich.de/record/53333