Journal Article

PreJuSER-53333

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ohmic contacts for GaAs based nanocolumns

Wensorra, J. ; Lepsa, M. I. ; Indlekofer, K. M.FZJ* ; Förster, A. ; Jaschinsky, P.FZJ* ; Voigtländer, B.FZJ* ; Pirug, G.FZJ* ; Lüth, H.FZJ*

2006
Wiley-VCH Weinheim

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/pssa.200622484

Abstract: Nonalloyed ohmic contacts with lateral dimensions in the sub-100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a 'top down' approach. They are realized on n-type GaAs using a thin low-temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron-beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I-V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1-2 x 10(-5) Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006

---