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000053333 0247_ $$2DOI$$a10.1002/pssa.200622484
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000053333 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000053333 084__ $$2WoS$$aPhysics, Applied
000053333 084__ $$2WoS$$aPhysics, Condensed Matter
000053333 1001_ $$0P:(DE-HGF)0$$aWensorra, J.$$b0
000053333 245__ $$aOhmic contacts for GaAs based nanocolumns
000053333 260__ $$aWeinheim$$bWiley-VCH$$c2006
000053333 300__ $$a3559 - 3564
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000053333 440_0 $$04913$$aPhysica Status Solidi A$$v203$$x0031-8965$$y14
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000053333 520__ $$aNonalloyed ohmic contacts with lateral dimensions in the sub-100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a 'top down' approach. They are realized on n-type GaAs using a thin low-temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron-beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I-V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1-2 x 10(-5) Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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000053333 7001_ $$0P:(DE-HGF)0$$aLepsa, M. I.$$b1
000053333 7001_ $$0P:(DE-Juel1)VDB7772$$aIndlekofer, K. M.$$b2$$uFZJ
000053333 7001_ $$0P:(DE-HGF)0$$aFörster, A.$$b3
000053333 7001_ $$0P:(DE-Juel1)VDB64015$$aJaschinsky, P.$$b4$$uFZJ
000053333 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b5$$uFZJ
000053333 7001_ $$0P:(DE-Juel1)128784$$aPirug, G.$$b6$$uFZJ
000053333 7001_ $$0P:(DE-Juel1)VDB975$$aLüth, H.$$b7$$uFZJ
000053333 773__ $$0PERI:(DE-600)1481091-8$$a10.1002/pssa.200622484$$gVol. 203, p. 3559 - 3564$$p3559 - 3564$$q203<3559 - 3564$$tPhysica status solidi / A$$v203$$x0031-8965$$y2006
000053333 8567_ $$uhttp://dx.doi.org/10.1002/pssa.200622484
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000053333 9141_ $$y2006
000053333 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000053333 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000053333 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x2
000053333 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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