TY  - JOUR
AU  - Wensorra, J.
AU  - Lepsa, M. I.
AU  - Indlekofer, K. M.
AU  - Förster, A.
AU  - Jaschinsky, P.
AU  - Voigtländer, B.
AU  - Pirug, G.
AU  - Lüth, H.
TI  - Ohmic contacts for GaAs based nanocolumns
JO  - Physica status solidi / A
VL  - 203
SN  - 0031-8965
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-53333
SP  - 3559 - 3564
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Nonalloyed ohmic contacts with lateral dimensions in the sub-100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a 'top down' approach. They are realized on n-type GaAs using a thin low-temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron-beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I-V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1-2 x 10(-5) Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000242536100021
DO  - DOI:10.1002/pssa.200622484
UR  - https://juser.fz-juelich.de/record/53333
ER  -