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| Hauptseite > Publikationsdatenbank > Ohmic contacts for GaAs based nanocolumns > print |
| 001 | 53333 | ||
| 005 | 20180211171309.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1002/pssa.200622484 |
| 024 | 7 | _ | |2 WOS |a WOS:000242536100021 |
| 037 | _ | _ | |a PreJuSER-53333 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Wensorra, J. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Ohmic contacts for GaAs based nanocolumns |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2006 |
| 300 | _ | _ | |a 3559 - 3564 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physica Status Solidi A |x 0031-8965 |0 4913 |y 14 |v 203 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Nonalloyed ohmic contacts with lateral dimensions in the sub-100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a 'top down' approach. They are realized on n-type GaAs using a thin low-temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron-beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I-V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1-2 x 10(-5) Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Lepsa, M. I. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Indlekofer, K. M. |b 2 |u FZJ |0 P:(DE-Juel1)VDB7772 |
| 700 | 1 | _ | |a Förster, A. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Jaschinsky, P. |b 4 |u FZJ |0 P:(DE-Juel1)VDB64015 |
| 700 | 1 | _ | |a Voigtländer, B. |b 5 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 700 | 1 | _ | |a Pirug, G. |b 6 |u FZJ |0 P:(DE-Juel1)128784 |
| 700 | 1 | _ | |a Lüth, H. |b 7 |u FZJ |0 P:(DE-Juel1)VDB975 |
| 773 | _ | _ | |a 10.1002/pssa.200622484 |g Vol. 203, p. 3559 - 3564 |p 3559 - 3564 |q 203<3559 - 3564 |0 PERI:(DE-600)1481091-8 |t Physica status solidi / A |v 203 |y 2006 |x 0031-8965 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1002/pssa.200622484 |
| 909 | C | O | |o oai:juser.fz-juelich.de:53333 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 2 |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
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