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000053406 0247_ $$2DOI$$a10.1017/S1431927605050373
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000053406 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000053406 084__ $$2WoS$$aMicroscopy
000053406 1001_ $$0P:(DE-HGF)0$$aSpieker, E.$$b0
000053406 245__ $$aSelf-assembled nanostructures on VSe2 surfaces induced by Cu deposition
000053406 260__ $$aNew York, NY$$bCambridge University Press$$c2005
000053406 300__ $$a456 - 471
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000053406 440_0 $$010221$$aMicroscopy and Microanalysis$$v11$$x1431-9276
000053406 500__ $$aRecord converted from VDB: 12.11.2012
000053406 520__ $$aAnalytical transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been applied for the characterization of evolution, lateral arrangements, orientations, and the microscopic nature of nanostructures formed during the early stages of ultrahigh vacuum electron beam evaporation of Cu onto surfaces of VSe2 layered crystals. Linear nanostructure of relatively large lateral dimension (100-500 nm) and networks of smaller nanostructures (lateral dimension: 15-30 nm; mesh sizes: 500-2000 nm) are subsequently formed on the substrate surfaces. Both types of nanostructures are not Cu nanowires but are composed of two strands of crystalline substrate material elevating above the substrate surface. For the large nanostructures a symmetric roof structure with an inclination angle of approximately 30 degrees with respect to the substrate surface could be deduced from detailed diffraction contrast experiments. In addition to the nanostructure networks a thin layer of a Cu-VSe2 intercalation phase of 3R polytype is observed at the substrate surface. A dense network of interface dislocations indicates that the phase formation is accompanied by in-plane strain. We present a model that explains the formation of large and small nanostructures as consequences of compressive layer strains that are relaxed by the formation of rooflike nanostructures, finally evolving into the observed networks with increasing deposition time. The dominating contributions to the compressive layer strains are considered to be an electronic charge transfer from the Cu adsorbate to the substrate and the formation of a Cu-VSe2 intercalation compound in a thin surface layer.
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000053406 65320 $$2Author$$aself-assembling nanostructures
000053406 65320 $$2Author$$ananowires
000053406 65320 $$2Author$$alayered chalcogenides
000053406 65320 $$2Author$$aintercalation
000053406 65320 $$2Author$$atransmission electron microscopy
000053406 65320 $$2Author$$astrain relaxation
000053406 7001_ $$0P:(DE-HGF)0$$aHollensteiner, S.$$b1
000053406 7001_ $$0P:(DE-HGF)0$$aJäger, W.$$b2
000053406 7001_ $$0P:(DE-Juel1)VDB26000$$aHaselier, H.$$b3$$uFZJ
000053406 7001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b4$$uFZJ
000053406 773__ $$0PERI:(DE-600)1481716-0$$a10.1017/S1431927605050373$$gVol. 11, p. 456 - 471$$p456 - 471$$q11<456 - 471$$tMicroscopy and microanalysis$$v11$$x1431-9276$$y2005
000053406 8567_ $$uhttp://dx.doi.org/10.1017/S1431927605050373
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000053406 9141_ $$aNachtrag$$y2005
000053406 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000053406 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000053406 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
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