Journal Article PreJuSER-53406

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Self-assembled nanostructures on VSe2 surfaces induced by Cu deposition

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2005
Cambridge University Press New York, NY

Microscopy and microanalysis 11, 456 - 471 () [10.1017/S1431927605050373]

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Abstract: Analytical transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been applied for the characterization of evolution, lateral arrangements, orientations, and the microscopic nature of nanostructures formed during the early stages of ultrahigh vacuum electron beam evaporation of Cu onto surfaces of VSe2 layered crystals. Linear nanostructure of relatively large lateral dimension (100-500 nm) and networks of smaller nanostructures (lateral dimension: 15-30 nm; mesh sizes: 500-2000 nm) are subsequently formed on the substrate surfaces. Both types of nanostructures are not Cu nanowires but are composed of two strands of crystalline substrate material elevating above the substrate surface. For the large nanostructures a symmetric roof structure with an inclination angle of approximately 30 degrees with respect to the substrate surface could be deduced from detailed diffraction contrast experiments. In addition to the nanostructure networks a thin layer of a Cu-VSe2 intercalation phase of 3R polytype is observed at the substrate surface. A dense network of interface dislocations indicates that the phase formation is accompanied by in-plane strain. We present a model that explains the formation of large and small nanostructures as consequences of compressive layer strains that are relaxed by the formation of rooflike nanostructures, finally evolving into the observed networks with increasing deposition time. The dominating contributions to the compressive layer strains are considered to be an electronic charge transfer from the Cu adsorbate to the substrate and the formation of a Cu-VSe2 intercalation compound in a thin surface layer.

Keyword(s): J ; self-assembling nanostructures (auto) ; nanowires (auto) ; layered chalcogenides (auto) ; intercalation (auto) ; transmission electron microscopy (auto) ; strain relaxation (auto)


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektronische Materialien (IFF-IEM)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: Nachtrag
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 Record created 2012-11-13, last modified 2018-02-11



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