001     53406
005     20180211173148.0
024 7 _ |2 pmid
|a pmid:17481326
024 7 _ |2 DOI
|a 10.1017/S1431927605050373
024 7 _ |2 WOS
|a WOS:000232378800008
037 _ _ |a PreJuSER-53406
041 _ _ |a eng
082 _ _ |a 570
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Microscopy
100 1 _ |a Spieker, E.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Self-assembled nanostructures on VSe2 surfaces induced by Cu deposition
260 _ _ |a New York, NY
|b Cambridge University Press
|c 2005
300 _ _ |a 456 - 471
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Microscopy and Microanalysis
|x 1431-9276
|0 10221
|v 11
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Analytical transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been applied for the characterization of evolution, lateral arrangements, orientations, and the microscopic nature of nanostructures formed during the early stages of ultrahigh vacuum electron beam evaporation of Cu onto surfaces of VSe2 layered crystals. Linear nanostructure of relatively large lateral dimension (100-500 nm) and networks of smaller nanostructures (lateral dimension: 15-30 nm; mesh sizes: 500-2000 nm) are subsequently formed on the substrate surfaces. Both types of nanostructures are not Cu nanowires but are composed of two strands of crystalline substrate material elevating above the substrate surface. For the large nanostructures a symmetric roof structure with an inclination angle of approximately 30 degrees with respect to the substrate surface could be deduced from detailed diffraction contrast experiments. In addition to the nanostructure networks a thin layer of a Cu-VSe2 intercalation phase of 3R polytype is observed at the substrate surface. A dense network of interface dislocations indicates that the phase formation is accompanied by in-plane strain. We present a model that explains the formation of large and small nanostructures as consequences of compressive layer strains that are relaxed by the formation of rooflike nanostructures, finally evolving into the observed networks with increasing deposition time. The dominating contributions to the compressive layer strains are considered to be an electronic charge transfer from the Cu adsorbate to the substrate and the formation of a Cu-VSe2 intercalation compound in a thin surface layer.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science, Pubmed
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a self-assembling nanostructures
653 2 0 |2 Author
|a nanowires
653 2 0 |2 Author
|a layered chalcogenides
653 2 0 |2 Author
|a intercalation
653 2 0 |2 Author
|a transmission electron microscopy
653 2 0 |2 Author
|a strain relaxation
700 1 _ |a Hollensteiner, S.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Jäger, W.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Haselier, H.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB26000
700 1 _ |a Schroeder, H.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB3130
773 _ _ |a 10.1017/S1431927605050373
|g Vol. 11, p. 456 - 471
|p 456 - 471
|q 11<456 - 471
|0 PERI:(DE-600)1481716-0
|t Microscopy and microanalysis
|v 11
|y 2005
|x 1431-9276
856 7 _ |u http://dx.doi.org/10.1017/S1431927605050373
909 C O |o oai:juser.fz-juelich.de:53406
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |a Nachtrag
|y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB321
|x 0
970 _ _ |a VDB:(DE-Juel1)83923
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21