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001     53409
005     20200423204358.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.2336621
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024 7 _ |a 2128/1032
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Jeong, D. S.
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245 _ _ |a Impedance spectroscopy of TiO2 thin film showing resistive switching
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2006
300 _ _ |a 082909
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 89
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Impedance characteristics of 27 nm thick anatase TiO2 films showing bistable resistive switching were investigated in the frequency domain (100 Hz-10 MHz) in various resistance states, a fresh state (before electroforming), a high resistive state (HRS), and a low resistive state (LRS). dc conductance in the film becomes dominent in HRS and LRS and the capacitances in the various states are almost identical. Numerical calculations using finite element analysis were performed for the localized filament and homogeneous model, whose results suggest that the filament model is consistent with the experimental results. (c) 2006 American Institute of Physics.
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700 1 _ |a Schroeder, H.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.2336621
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856 7 _ |u http://dx.doi.org/10.1063/1.2336621
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