Journal Article

PreJuSER-53409

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impedance spectroscopy of TiO2 thin film showing resistive switching

Jeong, D. S.FZJ* ; Schroeder, H.FZJ* ; Waser, R.FZJ*

2006
American Institute of Physics Melville, NY

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/1032  doi:10.1063/1.2336621

Abstract: Impedance characteristics of 27 nm thick anatase TiO2 films showing bistable resistive switching were investigated in the frequency domain (100 Hz-10 MHz) in various resistance states, a fresh state (before electroforming), a high resistive state (HRS), and a low resistive state (LRS). dc conductance in the film becomes dominent in HRS and LRS and the capacitances in the various states are almost identical. Numerical calculations using finite element analysis were performed for the localized filament and homogeneous model, whose results suggest that the filament model is consistent with the experimental results. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

---

Database coverage:

---