%0 Journal Article
%A Waser, R.
%T Resistive non-volatile memory devices
%J Microelectronic engineering
%V 86
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M PreJuSER-5386
%D 2009
%Z Record converted from VDB: 12.11.2012
%X The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented. (C) 2009 Published by Elsevier B.V.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000267460100104
%R 10.1016/j.mee.2009.03.132
%U https://juser.fz-juelich.de/record/5386