Journal Article

PreJuSER-5386

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive non-volatile memory devices

Waser, R.FZJ*

2009
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2009.03.132

Abstract: The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented. (C) 2009 Published by Elsevier B.V.

Keyword(s): J ; Resistive switching (auto) ; Non-volatile memories (auto) ; Electrochemical metallization (auto) ; Valence change (auto) ; Thermochemistry (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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