000005386 001__ 5386
000005386 005__ 20190625110712.0
000005386 0247_ $$2DOI$$a10.1016/j.mee.2009.03.132
000005386 0247_ $$2WOS$$aWOS:000267460100104
000005386 0247_ $$2altmetric$$aaltmetric:21802312
000005386 037__ $$aPreJuSER-5386
000005386 041__ $$aeng
000005386 082__ $$a620
000005386 084__ $$2WoS$$aEngineering, Electrical & Electronic
000005386 084__ $$2WoS$$aNanoscience & Nanotechnology
000005386 084__ $$2WoS$$aOptics
000005386 084__ $$2WoS$$aPhysics, Applied
000005386 1001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b0$$uFZJ
000005386 245__ $$aResistive non-volatile memory devices
000005386 260__ $$a[S.l.] @$$bElsevier$$c2009
000005386 300__ $$a
000005386 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000005386 3367_ $$2DataCite$$aOutput Types/Journal article
000005386 3367_ $$00$$2EndNote$$aJournal Article
000005386 3367_ $$2BibTeX$$aARTICLE
000005386 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000005386 3367_ $$2DRIVER$$aarticle
000005386 440_0 $$04347$$aMicroelectronic Engineering$$v86$$x0167-9317$$y7
000005386 500__ $$aRecord converted from VDB: 12.11.2012
000005386 520__ $$aThe review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented. (C) 2009 Published by Elsevier B.V.
000005386 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000005386 588__ $$aDataset connected to Web of Science
000005386 650_7 $$2WoSType$$aJ
000005386 65320 $$2Author$$aResistive switching
000005386 65320 $$2Author$$aNon-volatile memories
000005386 65320 $$2Author$$aElectrochemical metallization
000005386 65320 $$2Author$$aValence change
000005386 65320 $$2Author$$aThermochemistry
000005386 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2009.03.132$$gVol. 86$$q86$$tMicroelectronic engineering$$v86$$x0167-9317$$y2009
000005386 8567_ $$uhttp://dx.doi.org/10.1016/j.mee.2009.03.132
000005386 909CO $$ooai:juser.fz-juelich.de:5386$$pVDB
000005386 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000005386 9141_ $$y2009
000005386 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000005386 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000005386 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000005386 970__ $$aVDB:(DE-Juel1)112816
000005386 980__ $$aVDB
000005386 980__ $$aConvertedRecord
000005386 980__ $$ajournal
000005386 980__ $$aI:(DE-Juel1)PGI-7-20110106
000005386 980__ $$aI:(DE-82)080009_20140620
000005386 980__ $$aUNRESTRICTED
000005386 981__ $$aI:(DE-Juel1)PGI-7-20110106
000005386 981__ $$aI:(DE-Juel1)VDB881