TY  - JOUR
AU  - Waser, R.
TI  - Resistive non-volatile memory devices
JO  - Microelectronic engineering
VL  - 86
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-5386
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented. (C) 2009 Published by Elsevier B.V.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000267460100104
DO  - DOI:10.1016/j.mee.2009.03.132
UR  - https://juser.fz-juelich.de/record/5386
ER  -