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@ARTICLE{Waser:5386,
      author       = {Waser, R.},
      title        = {{R}esistive non-volatile memory devices},
      journal      = {Microelectronic engineering},
      volume       = {86},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-5386},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The review provides a survey of non-volatile, highly
                      scalable memory devices which are based on redox phenomena
                      controlling the resistance of nanoscale memory cells. The
                      classification of the memory effects, the understanding of
                      the underlying mechanisms, and a sketch of the integration
                      efforts will be presented. (C) 2009 Published by Elsevier
                      B.V.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Optics / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000267460100104},
      doi          = {10.1016/j.mee.2009.03.132},
      url          = {https://juser.fz-juelich.de/record/5386},
}