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| 001 | 5386 | ||
| 005 | 20190625110712.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.mee.2009.03.132 |
| 024 | 7 | _ | |2 WOS |a WOS:000267460100104 |
| 024 | 7 | _ | |a altmetric:21802312 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-5386 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Optics |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Waser, R. |b 0 |u FZJ |0 P:(DE-Juel1)131022 |
| 245 | _ | _ | |a Resistive non-volatile memory devices |
| 260 | _ | _ | |a [S.l.] @ |b Elsevier |c 2009 |
| 300 | _ | _ | |a |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Microelectronic Engineering |x 0167-9317 |0 4347 |y 7 |v 86 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented. (C) 2009 Published by Elsevier B.V. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Resistive switching |
| 653 | 2 | 0 | |2 Author |a Non-volatile memories |
| 653 | 2 | 0 | |2 Author |a Electrochemical metallization |
| 653 | 2 | 0 | |2 Author |a Valence change |
| 653 | 2 | 0 | |2 Author |a Thermochemistry |
| 773 | _ | _ | |a 10.1016/j.mee.2009.03.132 |g Vol. 86 |q 86 |0 PERI:(DE-600)1497065-x |t Microelectronic engineering |v 86 |y 2009 |x 0167-9317 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.mee.2009.03.132 |
| 909 | C | O | |o oai:juser.fz-juelich.de:5386 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2009 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)112816 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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