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000054031 084__ $$2WoS$$aPhysics, Applied
000054031 1001_ $$0P:(DE-Juel1)VDB64746$$aLopes, J. M. J.$$b0$$uFZJ
000054031 245__ $$aAmorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric
000054031 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
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000054031 440_0 $$0562$$aApplied Physics Letters$$v89$$x0003-6951
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000054031 520__ $$aLanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000 degrees C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2 +/- 0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV. Capacitance and leakage current measurements reveal C-V curves with a small hysteresis, a dielectric constant of approximate to 32, and low leakage current density levels. (c) 2006 American Institute of Physics.
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000054031 7001_ $$0P:(DE-Juel1)VDB5979$$aRije, E.$$b3$$uFZJ
000054031 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b4$$uFZJ
000054031 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
000054031 7001_ $$0P:(DE-HGF)0$$aAfanas'ev, V. V.$$b6
000054031 7001_ $$0P:(DE-HGF)0$$aShamuilia, S.$$b7
000054031 7001_ $$0P:(DE-HGF)0$$aStesmans, A.$$b8
000054031 7001_ $$0P:(DE-HGF)0$$aJia, Y.$$b9
000054031 7001_ $$0P:(DE-HGF)0$$aSchlom, D. G.$$b10
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000054031 8567_ $$uhttp://hdl.handle.net/2128/2045$$uhttp://dx.doi.org/10.1063/1.2393156
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