Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.; Afanas'ev, V. V.; Stesmans, A.; Schlom, D. G.; Jia, Y.; Roeckerath, M.; Schubert, J.; Mantl, S.; Heeg, T.; Rije, E.; Shamuilia, S.

doi:10.1063/1.2393156

Journal Article

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.FZJ* ; Roeckerath, M.FZJ* ; Heeg, T.FZJ* ; Rije, E.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ* ; Afanas'ev, V. V. ; Shamuilia, S. ; Stesmans, A. ; Jia, Y. ; Schlom, D. G.

2006
American Institute of Physics Melville, NY

Applied physics letters 89, 222902 (2006) [10.1063/1.2393156]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2045 doi:10.1063/1.2393156

Abstract: Lanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000 degrees C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2 +/- 0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV. Capacitance and leakage current measurements reveal C-V curves with a small hysteresis, a dielectric constant of approximate to 32, and low leakage current density levels. (c) 2006 American Institute of Physics.

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