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@ARTICLE{Lopes:54031,
      author       = {Lopes, J. M. J. and Roeckerath, M. and Heeg, T. and Rije,
                      E. and Schubert, J. and Mantl, S. and Afanas'ev, V. V. and
                      Shamuilia, S. and Stesmans, A. and Jia, Y. and Schlom, D.
                      G.},
      title        = {{A}morphous lanthanum lutetium oxide thin films as an
                      alternative high-k gate dielectric},
      journal      = {Applied physics letters},
      volume       = {89},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-54031},
      pages        = {222902},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Lanthanum lutetium oxide thin films were grown on (100) Si
                      by pulsed laser deposition. Rutherford backscattering
                      spectrometry, atomic force microscopy, x-ray diffraction,
                      and x-ray reflectometry were employed to investigate the
                      samples. The results indicate the growth of stoichiometric
                      and smooth LaLuO3 films that remain amorphous up to 1000
                      degrees C. Internal photoemission and photoconductivity
                      measurements show a band gap width of 5.2 +/- 0.1 eV and
                      symmetrical conduction and valence band offsets of 2.1 eV.
                      Capacitance and leakage current measurements reveal C-V
                      curves with a small hysteresis, a dielectric constant of
                      approximate to 32, and low leakage current density levels.
                      (c) 2006 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {CNI / ISG-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB41 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000242538500075},
      doi          = {10.1063/1.2393156},
      url          = {https://juser.fz-juelich.de/record/54031},
}