%0 Journal Article
%A Milanov, A.
%A Bhakta, R.
%A Baunemann, A.
%A Becker, H.-W.
%A Thomas, R.
%A Ehrhart, P.
%A Winter, M.
%A Devi, A.
%T Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
%J Inorganic chemistry
%V 45
%@ 0020-1669
%C Washington, DC
%I American Chemical Society
%M PreJuSER-54436
%P 11008 - 11018
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Novel guanidinato complexes of hafnium [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:17173460
%U <Go to ISI:>//WOS:000242899400077
%R 10.1021/ic061056i
%U https://juser.fz-juelich.de/record/54436