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000054436 0247_ $$2DOI$$a10.1021/ic061056i
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000054436 084__ $$2WoS$$aChemistry, Inorganic & Nuclear
000054436 1001_ $$0P:(DE-HGF)0$$aMilanov, A.$$b0
000054436 245__ $$aGuanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
000054436 260__ $$aWashington, DC$$bAmerican Chemical Society$$c2006
000054436 300__ $$a11008 - 11018
000054436 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000054436 440_0 $$014061$$aInorganic Chemistry$$v45$$x0020-1669
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000054436 520__ $$aNovel guanidinato complexes of hafnium [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.
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000054436 7001_ $$0P:(DE-HGF)0$$aBhakta, R.$$b1
000054436 7001_ $$0P:(DE-HGF)0$$aBaunemann, A.$$b2
000054436 7001_ $$0P:(DE-HGF)0$$aBecker, H.-W.$$b3
000054436 7001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b4$$uFZJ
000054436 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b5$$uFZJ
000054436 7001_ $$0P:(DE-HGF)0$$aWinter, M.$$b6
000054436 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b7
000054436 773__ $$0PERI:(DE-600)1484438-2$$a10.1021/ic061056i$$gVol. 45, p. 11008 - 11018$$p11008 - 11018$$q45<11008 - 11018$$tInorganic chemistry$$v45$$x0020-1669$$y2006
000054436 8567_ $$uhttp://dx.doi.org/10.1021/ic061056i
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000054436 9141_ $$y2006
000054436 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000054436 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000054436 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
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