TY  - JOUR
AU  - Milanov, A.
AU  - Bhakta, R.
AU  - Baunemann, A.
AU  - Becker, H.-W.
AU  - Thomas, R.
AU  - Ehrhart, P.
AU  - Winter, M.
AU  - Devi, A.
TI  - Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
JO  - Inorganic chemistry
VL  - 45
SN  - 0020-1669
CY  - Washington, DC
PB  - American Chemical Society
M1  - PreJuSER-54436
SP  - 11008 - 11018
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Novel guanidinato complexes of hafnium [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:17173460
UR  - <Go to ISI:>//WOS:000242899400077
DO  - DOI:10.1021/ic061056i
UR  - https://juser.fz-juelich.de/record/54436
ER  -