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@ARTICLE{Milanov:54436,
      author       = {Milanov, A. and Bhakta, R. and Baunemann, A. and Becker,
                      H.-W. and Thomas, R. and Ehrhart, P. and Winter, M. and
                      Devi, A.},
      title        = {{G}uanidinate-stabilized monomeric hafnium amide complexes
                      as promising precursors for {MOCVD} of {H}f{O}2},
      journal      = {Inorganic chemistry},
      volume       = {45},
      issn         = {0020-1669},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {PreJuSER-54436},
      pages        = {11008 - 11018},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Novel guanidinato complexes of hafnium
                      [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2,
                      3), synthesized by insertion reactions of
                      N,N'-diisopropylcarbodiimide into the M-N bonds of
                      homologous hafnium amide complexes 1-3 and
                      {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt
                      metathesis reaction, are reported. Single-crystal X-ray
                      diffraction analysis revealed that compounds 1-3 were
                      monomers, while compound 4 was found to be a dimer. The
                      observed fluxional behavior of compounds 1-3 was studied in
                      detail using variable-temperature and two-dimensional NMR
                      techniques. The thermal characteristics of compounds 1-3
                      seem promising for HfO2 thin films by vapor deposition
                      techniques. Metal-organic chemical vapor deposition
                      experiments with compound 2 as the precursor resulted in
                      smooth, uniform, and stoichiometric HfO2 thin films at
                      relatively low deposition temperatures. The basic properties
                      of HfO2 thin films were characterized in some detail.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-IEM},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB321},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Inorganic $\&$ Nuclear},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:17173460},
      UT           = {WOS:000242899400077},
      doi          = {10.1021/ic061056i},
      url          = {https://juser.fz-juelich.de/record/54436},
}