Home > Publications database > Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2 > print

001     54436
005     20190625110353.0
024 7 _ |2 pmid
|a pmid:17173460
024 7 _ |2 DOI
|a 10.1021/ic061056i
024 7 _ |2 WOS
|a WOS:000242899400077
024 7 _ |a altmetric:21816290
|2 altmetric
037 _ _ |a PreJuSER-54436
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Inorganic & Nuclear
100 1 _ |a Milanov, A.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
260 _ _ |a Washington, DC
|b American Chemical Society
|c 2006
300 _ _ |a 11008 - 11018
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Inorganic Chemistry
|x 0020-1669
|0 14061
|v 45
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Novel guanidinato complexes of hafnium [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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700 1 _ |a Bhakta, R.
|b 1
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700 1 _ |a Baunemann, A.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Becker, H.-W.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Thomas, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB35139
700 1 _ |a Ehrhart, P.
|b 5
|u FZJ
|0 P:(DE-Juel1)VDB3072
700 1 _ |a Winter, M.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Devi, A.
|b 7
|0 P:(DE-HGF)0
773 _ _ |a 10.1021/ic061056i
|g Vol. 45, p. 11008 - 11018
|p 11008 - 11018
|q 45<11008 - 11018
|0 PERI:(DE-600)1484438-2
|t Inorganic chemistry
|v 45
|y 2006
|x 0020-1669
856 7 _ |u http://dx.doi.org/10.1021/ic061056i
909 C O |o oai:juser.fz-juelich.de:54436
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913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
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914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
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|d 14.09.2008
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