%0 Journal Article
%A Tschersich, K. G.
%A Littmark, U.
%A Beyer, W.
%T Adjustable hydrogen atom incorporation into sputter desposited a-SiC
%J Thin solid films
%V 515
%@ 0040-6090
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-54465
%P 464 - 467
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds. (c) 2005 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000241220600019
%R 10.1016/j.tsf.2005.12.296
%U https://juser.fz-juelich.de/record/54465