Journal Article

PreJuSER-54465

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Adjustable hydrogen atom incorporation into sputter desposited a-SiC

Tschersich, K. G.FZJ* ; Littmark, U.FZJ* ; Beyer, W.FZJ*

2006
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.tsf.2005.12.296

Abstract: Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds. (c) 2005 Elsevier B.V. All rights reserved.

Keyword(s): J ; amorphous materials (auto) ; sputtering (auto) ; hydrogen (auto) ; infrared spectroscopy (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)
2. Biologische Schichten (ISG-4)

Research Program(s):

1. Erneuerbare Energien (P11)
2. Kondensierte Materie (P54)

Appears in the scientific report 2006

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