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000054465 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000054465 084__ $$2WoS$$aMaterials Science, Coatings & Films
000054465 084__ $$2WoS$$aPhysics, Applied
000054465 084__ $$2WoS$$aPhysics, Condensed Matter
000054465 1001_ $$0P:(DE-Juel1)VDB34109$$aTschersich, K. G.$$b0$$uFZJ
000054465 245__ $$aAdjustable hydrogen atom incorporation into sputter desposited a-SiC
000054465 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000054465 300__ $$a464 - 467
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000054465 520__ $$aThin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds. (c) 2005 Elsevier B.V. All rights reserved.
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000054465 65320 $$2Author$$aamorphous materials
000054465 65320 $$2Author$$asputtering
000054465 65320 $$2Author$$ahydrogen
000054465 65320 $$2Author$$ainfrared spectroscopy
000054465 7001_ $$0P:(DE-Juel1)VDB58263$$aLittmark, U.$$b1$$uFZJ
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